Veeco III-V molecular beam epitaxy system
Location:
ANFF-NSW Node
Lab 1
Process type:
Non Material Specific - Deposition Thin Film
Process summary:
Molecular Beam Epitaxy of III-V Materials. Source Materials- Gallium, Indium, Aluminium, Arsenic, Antimony, Bismuth. Dopant Materials- Silicon, Beryllium. Single wafer up to 50mm diameter
Marquee:
Yes
Operational Status:
Operational
See ANFF-NSW Website for Further Information