Veeco III-V molecular beam epitaxy system

Location: 
ANFF-NSW Node
Lab 1
Process type: 
Non Material Specific - Deposition Thin Film
Process summary: 

Molecular Beam Epitaxy of III-V Materials. Source Materials- Gallium, Indium, Aluminium, Arsenic, Antimony, Bismuth. Dopant Materials- Silicon, Beryllium. Single wafer up to 50mm diameter

Marquee: 
Yes
Operational Status: 
Operational

See ANFF-NSW Website for Further Information