STS ICP-RIE system

Location: 
ANFF-NSW Node
Lab 1
Process type: 
Non Material Specific - Pattern
Process summary: 

Reactive Ion Etching; Deep, high aspect ratio Si etching, deep SiO2 etching; O2, SF6, CF4, CHF3, Ar, CH4; Si, SiO2, Si3N4, high purity quartz; Masks: Photoresists, HSQ, SiO2, a-Si, Poly-Si, Chrome, Alumina; Single wafer up to 100mm diameter; Inductively coupled plasma; Bosch process for high aspect silicon etching

Marquee: 
Yes
Operational Status: 
Operational

See ANFF-NSW Website for Further Information