Raith 150TWO EBL system

Location: 
ANFF-NSW Node
Lab 1
Process type: 
Non Material Specific - Pattern
Process summary: 

High resolution lithography (wafer scale); Semiconductors (eg. Si, GaAs ), Insulators (eg. Glass, Quartz, Sapphire); Single wafer up to 200mm diameter (max write field 150 x 150mm); sub-10nm lithography; 10-30keV accelerating voltage; Fixed Beam Moving Stage option (stitch-free patterning over 150mm)

Marquee: 
Yes
Operational Status: 
Operational

See ANFF-NSW Website for Further Information